Third sound on copper and glass twin bars
Jan-Pascal van Best

Kamerlingh Onnes Laboratory
Leiden State University, August 1996
Contents
1 Third Sound
1.1 Introduction
1.2 Third sound speed
1.3 Third sound attenuation
1.4 Film thickness
1.4.1 The vapour pressure pv
1.4.2 The number of 4He atoms in the cell N
1.4.3 The third sound speed c3
2 Phonon modes in thin films recalculated
2.1 Introduction
2.2 A new phonon distribution function
2.2.1 Crystal dimensions
2.2.2 The density of states over w
2.2.3 Angular dependence of phonon density
2.2.4 The density of states over w recalculated as a check
2.2.5 Taking into account discreteness of ky
2.2.6 The density of states over q
2.3 Monte Carlo simulations
2.4 Kapitza resistance
2.4.1 Heat flux
2.4.2 Kapitza resistance
2.5 Discussion
2.5.1 Experimental support
2.5.2 Suggestions for improvement
3 Experimental set-up
3.1 Cryogenics
3.2 The cell
3.3 The bar geometry
3.4 Electrolytic polishing of copper
3.5 Excitation of third sound
3.6 Detection of third sound
3.7 Gas handling system
4 Experimental results
4.1 Third sound signals
4.2 Third sound speed
4.2.1 Comparison of c3,gl and c3,Cu
4.2.2 Calculation of dgl and dCu
4.2.3 c3,Cu versus dCu
4.3 Third sound attenuation
4.3.1 Calculation of the attenuation coefficient a
4.3.2 Attenuation on the glass bar
4.3.3 Attenuation on the copper bar
4.4 Discussion and conclusions
4.4.1 Third sound on copper
4.4.2 Comparison with Brisson's experiments
4.4.3 Attenuation coefficient on copper
4.4.4 Problem: Pressure determination
4.4.5 Problem: Film thickness determination error
A Drawings
B Symbols
List of Figures
1.1 Third sound speed c3 in 4He on glass as a function of film thickness d
1.2 Attenuation coefficient a on glass as a function of film thickness d
1.3 Attenuation coefficient a on copper as a function of film thickness d
2.1 Phonon \mathaccent "017E\relax k-vectors with \voidb@x w\mathaccent "017E\relax k < 5
2.2 Distribution function over w for w < 0.1 ·1015 \voidb@x \voidb@x s-1
2.3 Distribution function over w for w < 1012 \voidb@x \voidb@x s-1
2.4 Distribution function over w for w < 109 \voidb@x \voidb@x s-1
2.5 Distribution function over q for w < 1012 \voidb@x \voidb@x s-1
2.6 Kapitza resistance between gold heater and glass substrate as a function of T
3.1 Pumped 4He cryostat
3.2 Experimental cell
3.3 Twin bars setup
3.4 Setup for electropolishing the copper bar
3.5 Electrical circuit for electropolishing
3.6 Typical electropolishing I,V-diagram
3.7 Heater on copper
3.8 Excitation electronics
3.9 Tunnel diode and filtering electronics
3.10 Detection system
3.11 Gas handling system
4.1 Third sound signal on glass. \voidb@x n \voidb@x in = 16.83 mmol
4.2 Third sound signal on glass. \voidb@x n \voidb@x in = 35.9 mmol
4.3 Third sound signal on copper. \voidb@x n \voidb@x in = 35.9 mmol
4.4 Third sound speed c3 on copper and on glass as a function of the amount of 4He in the cell
4.5 Third sound speed c3,Cu on copper as a function of 4He film thickness dCu
4.6 Third sound attenuation a on glass as a function of 4He film thickness d
4.7 Third sound attenuation a on copper as a function of 4He film thickness \voidb@x dCu
4.8 Brisson's heater
A.1 Bottom plate in experimental cell
A.2 Left frame piece
A.3 Right frame piece
A.4 Copper resonator bar
A.5 Glass resonator bar
A.6 Mounting platform
1.1 Introduction
Liquid 4He becomes a superfluid, i.e., it can flow without friction,
below the l-temperature (2.18 K).
Superfluid 4He can be described by the two-fluids model[1].
This model states that the liquid consists of two parts:
- A normal part that is viscous and carries entropy.
- A superfluid part that is not viscous and does not carry entropy.
In a superfluid 4He film, a surface wave called third sound
can be excited. Only the superfluid part takes part in the surface wave,
because the normal part is stuck to the wall
as long as the viscous penetration depth is smaller
than the film thickness.
Third sound consists of both temperature and film thickness
oscillations and can be excited by either a heat pulse or a strong electric
field.
Third sound has been studied extensively,
mostly on a glass
substrate[7].
Subjects of study have been the propagation speed and the
damping coefficient, as a function of film thickness and temperature.
To extend these experiments to 3He, the film has to be cooled below 0.93 mK,
the 3He superfluid transition temperature. Because it is hard to cool
glass to these temperatures, a copper substrate has to be used.
Experiments with third sound on a copper substrate, using 4He,
have been described previously [14].
In these experiments a copper cylinder was
used which enabled resonant measuments; in previous experiments of the
same group a flat glass surface was used so that only time-of-flight
measurements could be performed.
The present work was undertaken to link previous experiments with
a copper cylinder to those with glass. For this, an
experimental cell that contains both a glass and
a copper cylinder was built in order to measure properties,
especially third sound speed and attenuation,
of third sound
on both substrates under the same circumstances.
The experiments described in this report involve the use of a thin gold
heater to excite
the third sound. Theoretical work on phonon modes and Kapitza
resistances at low temperatures and with thin materials was
performed as well (Chapter 2).
All symbols used in this paper are given in Appendix B.
1.2 Third sound speed
From the film equations of the two-fluids model the following
equation for the third sound speed can be derived[1]:
|
c32 = |
æ ç
è
|
|
rs r
|
ö ÷
ø
|
f
|
f(d) d |
| (1.1) |
with
Where
|
| |
|
|
|
Third sound speed (m s-1) |
| |
|
|
Non-superfluid layer (see below) |
| |
|
| |
|
|
Superfluid fraction in bulk 4He |
| |
|
|
Average superfluid fraction of the film |
| |
|
|
Van der Waals attractive force ( m s-2 ) |
| |
|
| |
|
|
Van der Waals potential (m2 s-2) |
| |
|
|
Van der Waals constant (g = 2.6·10-24 m5s-2 for glass) |
| |
|
| Retardation constant (b = 15 nm for glass) |
|
| |
|
D(T) is the ``dead layer'', the part, of typically a few atomic layers,
of the film that is not
superfluid and does not take part in third sound. Below 0.6 K,
D(T) = 1.47 a.l. (1 a.l. = one atomic layer or 0.36 nm.)
Above 0.6 K,
|
D(T) = A + B ·T |
æ ç
è
|
|
r rs
|
ö ÷
ø
|
|
| (1.5) |
with A = 0.5 a.l. and B = 1.13 a.l.K-1[7].
In Figure 1.1, the third sound speed on glass is plotted against film
thickness for various temperatures using Equation 1.1.
For ( [(rs)/(r)] )
data is taken from Wilks[18].

Figure 1.1: Third sound speed c3 in 4He on glass as a function of
film thickness d.
Solid line: T = 0.5 K;
Long dashes: T = 1.0 K;
Short dashes: T = 1.3 K
1.3 Third sound attenuation
The third sound attenuation coefficient a is defined
by the following equation:
with A(x) the amplitude of the third sound wave after running
a distance x. The unit of a is m-1.
Brouwer[4] and Draisma[7] give
an elaborate treatment of the theory
of third sound, including attenuation,
for temperatures above » 1 K.
Distinction is made between finite geometries (with two substrate plates
and 4He films opposite to each other, at a distance of 2 to 50 mm)
and the infinite geometry (with no opposite plate), as used in the experiments
described in Chapter 4.
For thin films, the dominant damping mechanisms are
the thermal waves induced in the 4He vapour and in the
substrate. For thicker films, the acoustic wave in the
vapour becomes the dominant damping mechanism.
The results from this theory, for 4.17 kHz third sound and the infinite geometry,
are presented in Figure 1.2 for a glass substrate
and in Figure 1.3 for a copper substrate.
These calculations were
performed using a program written by Brouwer[5].
The minimums in these plots indicate the transition from the
thin-film to the thick-film region, where the dominant damping
mechanism shifts from thermal to acoustic waves.

Figure 1.2: Attenuation coefficient a on glass as a function of
film thickness d, according to Brouwer[4,5].
n = 4.17 kHz, infinite geometry.
Solid line: T = 1.10 K;
Long dashes: T = 1.21 K;
Short dashes: T = 1.30 K.

Figure 1.3: Attenuation coefficient a on copper as a function of
film thickness d, according to Brouwer[4,5].
n = 4.17 kHz, infinite geometry.
Solid line: T = 1.10 K;
Long dashes: T = 1.21 K;
Short dashes: T = 1.30 K.
1.4 Film thickness
There are several ways to determine the helium film thickness on the
walls of a container.
The determination can be performed with the use of one of the following
parameters:
- The vapour pressure pv
- The number of 4He atoms in the cell N
- The third sound speed c3.
1.4.1 The vapour pressure pv
At a distance x from a surface, the helium pressure p can be expressed
as [7]
|
p = pv e-[(m W(x))/(kB T)] |
| (1.7) |
Here pv is the vapour pressure in the container,
W is the Van der Waals potential,
kB is Boltzmann's constant and m is the mass of
a 4He atom. The helium film-vapour
interface will appear at a distance d (the film thickness) from the
surface, where pressure p equals the saturated vapour pressure psv:
|
psv = pv e - [(m W(d))/(kB T)] |
| (1.8) |
Rewriting this formula using Equation 1.4 gives
with
The film thickness d can now be calculated recursively using these
formulas if T and pv are measured (because psv depends on T only).
1.4.2 The number of 4He atoms in the cell N
The film thickness d can also be calculated if the total number of 4He atoms
in the film Nfilm is known:
with S the inner area of the container and n the bulk 4He density.
However, the 4He density in the first one or two layers will be higher than the
bulk density because of the strong Van der Waals interaction. To
take this into account Equation 1.11 is rewritten as
Here N0 is the extra number of 4He atoms in the first
one or two layers.
To calculate Nfilm from the total number of 4He atoms in
the cell N the number of 4He atoms in the vapour is required:
Using Equation 1.8 yields:
|
Nvapour = |
psv(T) V kB T
|
e[(m W(d))/(kB T)] |
| (1.14) |
Since
the following result is obtained:
|
N = N0 + S ·n ·d+ |
psv(T) V kB T
|
e[(m W(d))/(kB T)] |
| (1.15) |
Rewriting the last equation gives
|
d = |
N S n
|
- |
N0 S n
|
- |
psv(T) V kB T
|
e[(m W(d))/(kB T)] |
| (1.16) |
which can be solved recursively to determine d if
N, T, S and V are known.
The value [(N0)/S n] = (0.98 ±0.09) a.l. has been
determined by Draisma [7].
1.4.3 The third sound speed c3
The film thickness can be
calculated recursively using Equation 1.1
if c3 and T are known.
Chapter 2
Phonon modes in thin films recalculated
2.1 Introduction
In third sound experiments, a thin gold film (thickness £ 100 nm)
is often used as a heater to excite the third sound wave [7].
An effect of the thinness of this film on the heat
transfer from the heater to
the substrate was suspected
because, at low temperature T, the typical phonon
wavelength l, calculated with
|
E = kB T = (h/2p) w = (h/2p) c |
ê ê
|
|
® k
|
ê ê
|
= (h/2p) c · |
2 p l
|
|
|
becomes 160 nm when using T = 1 K and sound velocity c = 3390 m s-1.
This value is of the same order of magnitude as the heater thickness.
Therefore an alternative for the standard
(Debye) phonon distribution function was developed and
tested by Monte Carlo simulation.
Furthermore the Kapitza resistance between the film and another
material was recalculated using the new phonon distribution function.
2.2 A new phonon distribution function
2.2.1 Crystal dimensions
All calculations will be performed assuming the film is a solid of
dimensions V = Lx×Ly×Lz with a cubic lattice with
lattice parameter a. There
are N = Nx×Ny×Nz atoms in the crystal. The speed of
sound in the solid is c.
Only longitudinal phonons will be take into account.
This treatment can easily be generalized to other phonon
polarizations.
The phonon (reciprocal lattice) vectors take the form
[k\vec] = (kx,ky,kz) with
Here the ki are limited to
-[(p)/a] ¼[(p)/a]
and thus the (integer) ni to the values
-[(Ni)/2] ¼[(Ni)/2].
Assuming
Lz << Ly << Lx
it follows
that the values of kx and ky are much more closely spaced than the
values of kz. Therefore kx and ky will be assumed to be
continuous, while kz will be considered discrete.
2.2.2 The density of states over w
The density of states over w (i.e. the number of
phonon states with circular frequency between w and w+dw)
is described [6] under the
approximation of a continuous distribution of [k\vec]-vectors by
In the following treatment discrete values will be used for kz.
First the density of states for a fixed value of kz is calculated.
Then this result is summed for all possible values of
kz.
Because the circular frequency of a phonon mode [k\vec] equals
|
w[k\vec]2 = |
æ è
|
c |
ê ê
|
|
® k
|
ê ê
|
ö ø
|
2
|
= c2 ( kx2 + ky2 + kz2 ) |
| (2.3) |
it follows that
|
kx2 + ky2 = |
w[k\vec]2 c2
|
- kz2 |
|
The number of [k\vec]-values with w[k\vec] < w for a fixed
value of kz equals
|
Nw[k\vec] < w = p |
æ ç
è
|
|
w2 c2
|
- kz2 |
ö ÷
ø
|
|
Lx Ly (2 p)2
|
|
|
with p( [(w2)/(c2)] - kz2 ) the ``area'' of the
circle in [k\vec]-space and [(Lx Ly)/((2 p)2)] the surface density
of states on that area.
Figure 2.1: Phonon [k\vec]-vectors with w[k\vec] < 5
As an example, in figure 2.1, the sphere depicts
The planes represent constant values of
The dark circles thus represent [k\vec]-vectors with [k\vec]2 < 5.
In this case, kz Î {-4,-2,0,2,4} are the
possible values of kz with w[k\vec] < [(Ö5)/c].
The number of modes with circular frequency between w and
w+dw at the fixed value of kz now equals
For w < c [(2 p)/(Lz)], only the modes with kz = 0 are
present (eq. 2.1 and 2.3),
so g(w) = [(Lx Ly)/(2 pc2)] w
for w < c [(2 p)/(Lz)].
For c [(2 p)/(Lz)] £ w < 2 c [(2 p)/(Lz)], 3 kz-values
are possible (kz = -1,0,1 ·[(2 p)/(Lz)]), etc.
The total number of modes becomes
|
g(w) dw = |
Lx Ly 2 pc2
|
·w· |
æ ç
è
|
1 + 2 |
ê ê
ë
|
|
Lz w 2 pc
|
ú ú
û
|
ö ÷
ø
|
dw |
| (2.4) |
where
ë x
û means the largest integer smaller than or
equal to x.
This equation is tested using Monte Carlo techniques
(section 2.3). Note that for large values of w
equation 2.4 becomes equal to
equation 2.2.
2.2.3 Angular dependence of phonon density
The values of [k\vec] do not have a uniform angular distribution because of the
discreteness of the values of kz. Therefore the phonon density of states
is not only a function of w (depending
on the absolute value of [k\vec] only), but also a function of the phonon
directions.
The density of states in every kx,ky-plane is
[(Lx Ly)/((2 p)2)]
(there is one phonon state in every area [(2 p)/(Lx)] ·[(2 p)/(Ly)]). The Dirac d-function must be used because
the kx,ky-planes lie a distance [(2 p)/(Lz)] apart.
The phonon density of states as a function of [k\vec] is
|
g(kx,ky,kz) dkx dky dkz = |
Lx Ly (2 p)2
|
· |
å
n Î Z
|
d |
æ ç
è
|
kz - |
2 p Lz
|
·n |
ö ÷
ø
|
dkx dky dkz |
| (2.5) |
with Z the set of all integer numbers.
This function is only valid for
sufficiently small values of [k\vec] (see section 2.2.1).
This differential function is transformed into the
new coordinates w,q,f with
Here w is the circular frequency, while q and f are given
by the direction of the phonon.
The density of states as a function of these new variables becomes
|
g(w,q,f) dw dq df = g(kx,ky,kz) · |
w2 c3
|
sinq dw dq df |
|
where [(w2)/(c3)] sinq is the Jacobian of this transformation.
Thus
|
| |
|
|
|
|
Lx Ly (2 p)2
|
· |
å
n Î Z
|
d |
æ ç
è
|
w c
|
cosq- |
2 p Lz
|
·n |
ö ÷
ø
|
· |
w2 c3
|
sinq dw dq df |
| |
|
|
|
Lx Ly Lz (2 pc)3
|
· |
å
n Î Z
|
d |
æ ç
è
|
Lz w 2 pc
|
cosq- n |
ö ÷
ø
|
·w2 sinq dw dq df |
| | (2.7) |
| |
|
Again, this is only valid for w < c [(p)/a]
(then the ki are always smaller than [(p)/a]).
If the discreteness of the values of kz is neglected, the density of
states as a function of [k\vec] becomes
|
gclass(kx,ky,ky) dkx dky dkz = |
Lx Ly Lz ( 2 p)3
|
|
| (2.8) |
Now the density of states as a function of w,q,f becomes
|
gclass(w,q,f) dw dq df = |
Lx Ly Lz ( 2 p)3
|
· |
w2 c3
|
sinq dw dq df |
| (2.9) |
2.2.4 The density of states over w recalculated as a check
The density of states over w is recalculated to check
equation 2.7 by integrating it with respect to
q and f.
|
| |
|
|
|
|
ó õ
|
p
0
|
dq |
ó õ
|
2p
0
|
df g(w,q,f) dw |
| |
|
|
|
ó õ
|
p
0
|
dq |
ó õ
|
2p
0
|
df |
Lx Ly Lz (2 pc)3
|
· |
å
n Î Z
|
d |
æ ç
è
|
Lz w 2 pc
|
cosq- n |
ö ÷
ø
|
·w2 sinq dw |
| |
|
|
|
Lx Ly Lz (2 pc)3
|
·2 p·w2 |
å
n Î Z
|
|
ó õ
|
+1
-1
|
dcosq |
2 pc Lz w
|
d |
æ ç
è
|
cosq- |
2 pc Lz w
|
·n |
ö ÷
ø
|
dw |
| |
|
|
Lx Ly 2 pc2
|
·w |
å
n Î Z
|
|
ó õ
|
+1
-1
|
dcosq d |
æ ç
è
|
cosq- |
2 pc Lz w
|
·n |
ö ÷
ø
|
dw |
|
| |
|
The integral in this expression differs from zero only when
or
|
n Î |
é ê
ë
|
- |
Lz w 2 pc
|
, |
Lz w 2 pc
|
ù ú
û
|
|
|
Its value then becomes 1. The sum becomes
1 + 2
ë [(Lz w)/(2 pc)]
û , so that
|
g(w) dw = |
Lx Ly 2 pc2
|
·w · |
æ ç
è
|
1 + 2 |
ê ê
ë
|
|
Lz w 2 pc
|
ú ú
û
|
ö ÷
ø
|
dw |
|
which equals equation 2.4.
2.2.5 Taking into account discreteness of ky
If it is assumed that Lz << Ly << Lx
the discreteness of ky can be taken into account,
just like the discreteness
of kz in the previous sections.
The phonon density of states as a function
of [k\vec] now becomes
|
g(kx,ky,kz) dkx dky dkz = |
Lx 2 p
|
|
å
ny Î Z
|
|
å
nz Î Z
|
d |
æ ç
è
|
ky- |
2 p Ly
|
ny |
ö ÷
ø
|
d |
æ ç
è
|
kz- |
2 p Lz
|
nz |
ö ÷
ø
|
dkx dky dkz |
|
and as a function of w, q, f
|
| |
| | |
|
|
|
Lx Ly Lz ( 2 pc )3
|
|
å
ny Î Z
|
|
å
nz Î Z
|
d |
æ ç
è
|
Ly w 2 pc
|
sinqsinf- ny |
ö ÷
ø
|
d |
æ ç
è
|
Lz w 2 pc
|
cosq- nz |
ö ÷
ø
|
· |
| |
|
|
| |
|
The distribution function over w will be calculated in the region
where w < 2 pc / Lz, so kz = 0.
|
| |
| | |
|
|
|
ó õ
|
p
0
|
dq |
ó õ
|
2p
0
|
df |
Lx Ly Lz ( 2 pc )3
|
|
å
ny Î Z
|
|
å
nz Î Z
|
d |
æ ç
è
|
Ly w 2 pc
|
sinqsinf- ny |
ö ÷
ø
|
d |
æ ç
è
|
Lz w 2 pc
|
cosq- nz |
ö ÷
ø
|
· |
| |
|
| |
|
|
|
Lx Ly Lz ( 2 pc )3
|
|
ó õ
|
2p
0
|
df |
ó õ
|
+1
-1
|
dcosq |
2 pc Lz w
|
|
å
ny Î Z
|
d |
æ ç
è
|
Ly w 2 pc
|
sinqsinf- ny |
ö ÷
ø
|
d(cosq) w2 dw |
| |
|
|
|
Lx Ly ( 2 pc )2
|
|
å
ny Î Z
|
|
2 pc Ly w
|
|
ó õ
|
2p
0
|
df d |
æ ç
è
|
sinf- |
2 pc Ly w
|
ny |
ö ÷
ø
|
w dw |
| |
|
|
Lx 2 pc
|
|
å
ny Î Z
|
|
ó õ
|
2p
0
|
df d |
æ ç
è
|
sinf- |
2 pc Ly w
|
ny |
ö ÷
ø
|
dw |
| (2.10) |
| |
|
To calculate the integral over f, the integration interval is first
changed into [ -p/2, 3p/2 ] and then split into two parts :
|
| |
| |
|
ó õ
|
2p
0
|
df d |
æ ç
è
|
sinf- |
2 pc Ly w
|
ny |
ö ÷
ø
|
= |
| |
|
|
|
ó õ
|
[(p)/2]
-[(p)/2]
|
df d |
æ ç
è
|
sinf- |
2 pc Ly w
|
ny |
ö ÷
ø
|
+ |
ó õ
|
[3/2] p
[(p)/2]
|
df d |
æ ç
è
|
sinf- |
2 pc Ly w
|
ny |
ö ÷
ø
|
|
| |
|
|
|
ó õ
|
1
-1
|
dsinf |
|
d |
æ ç
è
|
sinf- |
2 pc Ly w
|
ny |
ö ÷
ø
|
cos(arcsin(sinf))
|
- |
ó õ
|
1
-1
|
dsinf |
|
d |
æ ç
è
|
sinf- |
2 pc Ly w
|
ny |
ö ÷
ø
|
cos(p- arcsin(sinf))
|
|
| |
|
|
2 |
ó õ
|
1
-1
|
d x |
|
d |
æ ç
è
|
x - |
2 pc Ly w
|
ny |
ö ÷
ø
|
cos(arcsinx )
|
|
| |
|
|
ì ï ï ï í
ï ï ï î
|
|
|
|
2
|
| Ö |
1 - ([(2 pc)/(Ly w)])2 ny2 |
|
|
| |
if | [(2 pc)/(Ly w)] ny | £ 1 |
|
| |
|
|
| (2.11) |
| |
|
This gives the final result
|
g(w) dw = |
Lx pc
|
|
æ ç ç
ç è
|
1 + |
ë | [(Ly w)/(2 pc)] |
û å
n = 1
|
|
2
|
| Ö |
1 - ([(2 pc)/(Ly w)])2 n2 |
|
ö ÷ ÷
÷ ø
|
|
| (2.12) |
This equation is checked by Monte Carlo simulation
in section 2.3.
In the rest of this chapter,
the discreteness of kywill not be taken into account.
Only the discreteness of kzwill be taken into account because
in the experiments described in Chapters 3 and 4
the effects of the discreteness of ky are too small to play a
role of importance. (With Ly = 0.1 mm, the discrete steps in
ky are sized [(2 p)/(Ly)] = 63 m-1, which corresponds to
(with c = 3390 m s-1)
an energy of E = (h/2p) c ky = 2.3·10-29 J. This is small
compared to the thermal energy at
T = 1 K, E = kB T = 1.4 ·10-23 J).
2.2.6 The density of states over q
The density of states over q (i.e. the number of phonon states with
q between q and q+ dq) is calculated by
integrating g(w,q,f) with respect to w and f.
Only values of [k\vec] with w[k\vec] smaller than a given W will be taken
into account, because the modes will be occupied with a Bose-Einstein
distribution, which doesn't allow a noticable number of phonons above a
certain energy. The Bose-Einstein distribution will be used in
section 2.4 to calculate the equilibrium occupation of
the phonon state at a given temperature and hence the heat flux.
In the following treatment the case q = p/2, phonons
with kz = 0 will be excluded. This case will be examined at the end
of this section.
|
| |
|
|
|
|
ó õ
|
W
0
|
dw |
ó õ
|
2p
0
|
df g(w,q,f) dq |
| |
|
|
|
ó õ
|
W
0
|
dw |
ó õ
|
2p
0
|
df |
Lx Ly Lz (2 pc)3
|
· |
å
n Î Z
|
d |
æ ç
è
|
Lz w 2 pc
|
cosq- n |
ö ÷
ø
|
·w2 sinq dq |
| |
|
|
|
Lx Ly Lz (2 p)2 c3
|
sinq· |
å
n Î Z
|
|
ó õ
|
W
0
|
dw |
ê ê
ê
|
|
2 pc Lz cosq
|
ê ê
ê
|
d |
æ ç
è
|
w- |
2 pc Lz cosq
|
·n |
ö ÷
ø
|
w2 dq |
| |
|
|
|
Lx Ly 2 pc2
|
· |
sinq | cosq|
|
· |
å
n Î Z
|
|
ó õ
|
W
0
|
dw d |
æ ç
è
|
w- |
2 pc Lz cosq
|
·n |
ö ÷
ø
|
w2 dq |
| | (2.13) |
| |
|
The integral in this last equation will yield wn2 with
provided
For cosq > 0 it follows
|
n Î |
é ê
ë
|
0, |
WLz cosq 2 pc
|
ù ú
û
|
ÇZ |
|
and for cosq < 0
|
n Î |
é ê
ë
|
|
WLz cosq 2 pc
|
, 0 |
ù ú
û
|
ÇZ |
|
This yields that
|
| |
|
|
|
|
Lx Ly 2 pc2
|
· |
sinq | cosq|
|
· |
ë | [(WLz cosq)/(2 pc)] |
û å
n = 0
|
|
æ ç
è
|
|
2 pc Lz cosq
|
ö ÷
ø
|
2
|
·n2 dq |
| |
|
|
Lx Ly 2 pc2
|
· |
sinq | cosq|
|
· |
æ ç
è
|
|
2 pc Lz cosq
|
ö ÷
ø
|
2
|
|
ë | [(WLz cosq)/(2 pc)] |
û å
n = 0
|
n2 dq |
|
| |
|
Because åk = 0n k2 = [1/6] n (2n2 + 3n + 1) our final
result is
|
gW(q) dq = |
Lx Ly Lz2
|
· |
sinq | cos3q|
|
· |
p 3
|
n (2n2 + 3n + 1) dq with n = |
ê ê
ë
|
|
ê ê
ê
|
|
WLz cosq 2 pc
|
ê ê
ê
|
ú ú
û
|
|
| (2.14) |
This distribution is presented in Figure 2.5 (solid line).
Note that if W < 2 pc / Lz then n = 0 so
gW(q) dq = 0 for all q ¹ p/2.
This means that there are no modes with energy
(h/2p) w < 2 pc (h/2p) / Lz that have a component in
the kz-direction. Recalling the example in Figure 2.1,
w < 2 pc/Lz means that the sphere gets smaller than the
spacing between the planes and does not have an intersection with
other planes than kz = 0.
Also note that the preceding treatment is only
valid for q ¹ [(p)/2], because then cosq = 0.
Of course there are a lot of possible modes with q
exactly equal to [(p)/2], since this corresponds with
the kz = 0-plane.
The number of modes with q = [(p)/2],
Nw < W; q = [(p)/2]; 0 £ f £ 2 p,
can be calculated as follows:
|
| |
|
|
|
|
lim
D® 0
|
|
ó õ
|
W
0
|
dw |
ó õ
|
[(p)/2]+D
[(p)/2]-D
|
dq |
ó õ
|
2 p
0
|
df |
Lx Ly Lz ( 2 pc )3
|
· |
å
n Î Z
|
d |
æ ç
è
|
|
Lz w 2 pc
|
cosq- n |
ö ÷
ø
|
·w2 sinq |
| |
|
|
|
lim
D® 0
|
|
ó õ
|
W
0
|
dw |
Lx Ly Lz 4 p2 c3
|
· |
å
n Î Z
|
|
ê ê
ê
|
|
2 pc Lz w
|
ê ê
ê
|
|
ó õ
|
[(p)/2]+D
[(p)/2]-D
|
dq d |
æ ç
è
|
cosq- |
2 pc Lz w
|
·n |
ö ÷
ø
|
·w2 sinq |
| |
|
|
|
lim
D® 0
|
|
ó õ
|
W
0
|
dw |
Lx Ly 2 pc2
|
· |
å
n Î Z
|
|
ó õ
|
cos( [(p)/2]+D)
cos( [(p)/2]-D)
|
d cosq d |
æ ç
è
|
cosq- |
2 pc Lz w
|
·n |
ö ÷
ø
|
·w |
| |
|
| |
|
| (2.15) |
| |
|
Equations 2.14 and 2.15 will also be
checked with a Monte Carlo-simulation in section 2.3.
If the classical phonon distribution function of Equation 2.9
is used, calculation of the density of states over q gives
|
| |
|
|
|
|
ó õ
|
W
0
|
dw |
ó õ
|
2p
0
|
df gclass(w,q,f) dq |
| |
|
|
|
ó õ
|
W
0
|
dw |
ó õ
|
2p
0
|
df |
Lx Ly Lz ( 2 p)3
|
· |
w2 c3
|
sinq dq |
| |
|
|
Lx Ly Lz ( 2 p)2 c3
|
· |
W3 3
|
sinq dq |
| (2.16) |
| |
|
Taking the Lz ® ¥ limit of Equation 2.14 gives
the same result.
2.3 Monte Carlo simulations
The idea of using Monte Carlo techniques to check our calculations
was first conceived after finding
Equation 2.4 and its unexpected discontinuities. It was decided to
generate a large number of phonon [k\vec]-vectors of the form [k\vec] = (kx,ky,kz)
with ki = [(2 p)/(Li)] ni and to choose a random integer number in the
range -[(Ni)/2] ... [(Ni)/2] for each ni (see
section 2.2.1). With a large number of such random
[k\vec]-vectors, a good approximation of the phonon distribution function
g(w,q,f)
will be generated.
Next, all these [k\vec]-vectors can be classified with
respect to their values of w, q and f to generate,
for instance, the density of states over w.
In figures 2.2 to 2.4, g(w) from
these Monte Carlo simulations is plotted against w. The material
properties have been chosen to resemble a gold strip of dimensions
30 mm × 0.1 mm × 100 nm with c = 3390 m s-1 and
a = 0.257 nm.
The three figures plot the same function but on a different w-scale:
Figure 2.2 for w < 1014 s-1,
Figure 2.3 for w < 1012 s-1 and
Figure 2.4 for w < 109 s-1.
In Figure 2.2, it is demonstrated that, for w >> c[(2 p)/(Lz)] but w < c [(p)/a] Monte Carlo simulation
gives the same results for g(w) as the classical result of
equation 2.2. For w > c [(p)/a] the
finite crystal dimensions that the classical approximation does not take
into account causes a breakdown of g(w).
In Figure 2.3 the discrete steps of Equation 2.4
can be seen both in the analytical results and in the Monte Carlo
simulation. In Figure 2.4, on an even smaller scale,
the discontinuities of Equation 2.12 are shown to comply
with the Monte Carlo simulation.
In figure 2.5, the distribution function over theta
gW(q) is plotted. An upper limit
W = 1 ·1012 s-1 was used. The figure shows the
correspondence
between Equation 2.14 and the Monte Carlo simulation.
The number of modes with q = p/2 also agrees with the
analytical result from Equation 2.15.

Figure 2.2: Distribution function over w for
w < 1014 s-1.
Solid line: Classical function (Equation 2.2),
coinciding with the new phonon distribution function (Equation 2.4).
points: Monte Carlo simulation

Figure 2.3: Distribution function over w for w < 1012 s-1.
Solid line: Taking into account discreteness of kz
(equation 2.4); points: Monte Carlo simulation

Figure 2.4: Distribution function over w for w < 109 s-1.
Solid line: Analytical, taking into account discreteness of kz and ky
(equation 2.12); points: Monte Carlo simulation

Figure 2.5: Distribution function over q for w < 1012 s-1.
Solid line: Analytical (Equation );
dashed line: Classical results (Equation );
points: Monte Carlo simulation
2.4 Kapitza resistance
In the experiments described in Chapter 4 a thin gold heater
of approx. 100 nm
thickness and surface dimensions 0.1 mm × 30 mm, sputtered on
a glass substrate, was used to excite a third sound wave in a Helium film.
In this section
the effects of the new phonon distribution function on
the heat flux [Q\dot] through the gold-glass interface will be
considered.
Hereafter the new distribution function will be used to
recalculate the thermal (Kapitza) resistance.
The expression for the heat flux from a thin heater
of dimensions V = Lx ×Ly ×Lz, with the interface
to the substrate in the z-direction, is (from [12])
|
|
. Q
|
= A · |
ó õ
|
¥
0
|
dw |
ó õ
|
[(p)/2]
0
|
dq |
ó õ
|
2p
0
|
df |
g(w,q,f) V
|
· fBE( b(h/2p) w) · (h/2p) w· c · cosq· a(q) |
| (2.17) |
with
|
| |
|
|
| |
|
| |
|
| |
|
| |
|
|
thermodynamic temperature of the crystal |
| |
|
| |
|
|
fraction of phonons, coming in at an angle q, |
| |
| |
|
|