Third sound on copper and glass twin bars

Jan-Pascal van Best






cell.gif





Kamerlingh Onnes Laboratory

Leiden State University, August 1996

Contents

1  Third Sound
    1.1  Introduction
    1.2  Third sound speed
    1.3  Third sound attenuation
    1.4  Film thickness
        1.4.1  The vapour pressure pv
        1.4.2  The number of 4He atoms in the cell N
        1.4.3  The third sound speed c3
2  Phonon modes in thin films recalculated
    2.1  Introduction
    2.2  A new phonon distribution function
        2.2.1  Crystal dimensions
        2.2.2  The density of states over w
        2.2.3  Angular dependence of phonon density
        2.2.4  The density of states over w recalculated as a check
        2.2.5  Taking into account discreteness of ky
        2.2.6  The density of states over q
    2.3  Monte Carlo simulations
    2.4  Kapitza resistance
        2.4.1  Heat flux
        2.4.2  Kapitza resistance
    2.5  Discussion
        2.5.1  Experimental support
        2.5.2  Suggestions for improvement
3  Experimental set-up
    3.1  Cryogenics
    3.2  The cell
    3.3  The bar geometry
    3.4  Electrolytic polishing of copper
    3.5  Excitation of third sound
    3.6  Detection of third sound
    3.7  Gas handling system
4  Experimental results
    4.1  Third sound signals
    4.2  Third sound speed
        4.2.1  Comparison of c3,gl and c3,Cu
        4.2.2  Calculation of dgl and dCu
        4.2.3  c3,Cu versus dCu
    4.3  Third sound attenuation
        4.3.1  Calculation of the attenuation coefficient a
        4.3.2  Attenuation on the glass bar
        4.3.3  Attenuation on the copper bar
    4.4  Discussion and conclusions
        4.4.1  Third sound on copper
        4.4.2  Comparison with Brisson's experiments
        4.4.3  Attenuation coefficient on copper
        4.4.4  Problem: Pressure determination
        4.4.5  Problem: Film thickness determination error
A  Drawings
B  Symbols

List of Figures

    1.1  Third sound speed c3 in 4He on glass as a function of film thickness d
    1.2  Attenuation coefficient a on glass as a function of film thickness d
    1.3  Attenuation coefficient a on copper as a function of film thickness d

    2.1  Phonon \mathaccent "017E\relax k-vectors with \voidb@x w\mathaccent "017E\relax k < 5
    2.2  Distribution function over w for w < 0.1 ·1015   \voidb@x \voidb@x s-1
    2.3  Distribution function over w for w < 1012 \voidb@x \voidb@x s-1
    2.4  Distribution function over w for w < 109   \voidb@x \voidb@x s-1
    2.5  Distribution function over q for w < 1012 \voidb@x \voidb@x s-1
    2.6  Kapitza resistance between gold heater and glass substrate as a function of T

    3.1  Pumped 4He cryostat
    3.2  Experimental cell
    3.3  Twin bars setup
    3.4  Setup for electropolishing the copper bar
    3.5  Electrical circuit for electropolishing
    3.6  Typical electropolishing I,V-diagram
    3.7  Heater on copper
    3.8  Excitation electronics
    3.9  Tunnel diode and filtering electronics
    3.10  Detection system
    3.11  Gas handling system

    4.1  Third sound signal on glass. \voidb@x n \voidb@x in = 16.83 mmol
    4.2  Third sound signal on glass. \voidb@x n \voidb@x in = 35.9 mmol
    4.3  Third sound signal on copper. \voidb@x n \voidb@x in = 35.9 mmol
    4.4  Third sound speed c3 on copper and on glass as a function of the amount of 4He in the cell
    4.5  Third sound speed c3,Cu on copper as a function of 4He film thickness dCu
    4.6  Third sound attenuation a on glass as a function of 4He film thickness d
    4.7  Third sound attenuation a on copper as a function of 4He film thickness \voidb@x dCu
    4.8  Brisson's heater

    A.1  Bottom plate in experimental cell
    A.2  Left frame piece
    A.3  Right frame piece
    A.4  Copper resonator bar
    A.5  Glass resonator bar
    A.6  Mounting platform

Chapter 1
Third Sound

1.1  Introduction

Liquid 4He becomes a superfluid, i.e., it can flow without friction, below the l-temperature (2.18 K). Superfluid 4He can be described by the two-fluids model[1]. This model states that the liquid consists of two parts:

In a superfluid 4He film, a surface wave called third sound can be excited. Only the superfluid part takes part in the surface wave, because the normal part is stuck to the wall as long as the viscous penetration depth is smaller than the film thickness. Third sound consists of both temperature and film thickness oscillations and can be excited by either a heat pulse or a strong electric field.

Third sound has been studied extensively, mostly on a glass substrate[7]. Subjects of study have been the propagation speed and the damping coefficient, as a function of film thickness and temperature.

To extend these experiments to 3He, the film has to be cooled below 0.93 mK, the 3He superfluid transition temperature. Because it is hard to cool glass to these temperatures, a copper substrate has to be used. Experiments with third sound on a copper substrate, using 4He, have been described previously [14]. In these experiments a copper cylinder was used which enabled resonant measuments; in previous experiments of the same group a flat glass surface was used so that only time-of-flight measurements could be performed.

The present work was undertaken to link previous experiments with a copper cylinder to those with glass. For this, an experimental cell that contains both a glass and a copper cylinder was built in order to measure properties, especially third sound speed and attenuation, of third sound on both substrates under the same circumstances.

The experiments described in this report involve the use of a thin gold heater to excite the third sound. Theoretical work on phonon modes and Kapitza resistances at low temperatures and with thin materials was performed as well (Chapter 2).

All symbols used in this paper are given in Appendix B.

1.2  Third sound speed

From the film equations of the two-fluids model the following equation for the third sound speed can be derived[1]:

c32 = æ
ç
è
rs
r
ö
÷
ø


f 
f(d)  d
(1.1)
with
æ
ç
è
rs
r
ö
÷
ø


f 
=
æ
ç
è
rs
r
ö
÷
ø
d- D(T)
d
(1.2)
f(d)
=
W
d
(1.3)
W
=
- g
d3 æ
ç
è
1 + d
b
ö
÷
ø
(1.4)
Where
c3
=
Third sound speed (m s-1)
D(T)
=
Non-superfluid layer (see below)
T
=
Temperature (K)
æ
ç
è
rs
r
ö
÷
ø
=
Superfluid fraction in bulk 4He
æ
ç
è
rs
r
ö
÷
ø


f 
=
Average superfluid fraction of the film
f(d)
=
Van der Waals attractive force ( m  s-2 )
d
=
4He film thickness (m)
W
=
Van der Waals potential (m2 s-2)
g
=
Van der Waals constant (g = 2.6·10-24  m5s-2 for glass)
b
=
Retardation constant (b = 15  nm for glass)
D(T) is the ``dead layer'', the part, of typically a few atomic layers, of the film that is not superfluid and does not take part in third sound. Below 0.6 K, D(T) = 1.47  a.l. (1 a.l. = one atomic layer or 0.36 nm.) Above 0.6 K,
D(T) = A + B ·T æ
ç
è
r
rs
ö
÷
ø
(1.5)
with A = 0.5  a.l. and B = 1.13  a.l.K-1[7]. In Figure 1.1, the third sound speed on glass is plotted against film thickness for various temperatures using Equation 1.1. For ( [(rs)/(r)] ) data is taken from Wilks[18].


Picture 1

Figure 1.1: Third sound speed c3 in 4He on glass as a function of film thickness d. Solid line: T = 0.5  K; Long dashes: T = 1.0  K; Short dashes: T = 1.3  K

1.3  Third sound attenuation

The third sound attenuation coefficient a is defined by the following equation:
A(x) = A(0) ·e-ax
(1.6)
with A(x) the amplitude of the third sound wave after running a distance x. The unit of a is m-1. Brouwer[4] and Draisma[7] give an elaborate treatment of the theory of third sound, including attenuation, for temperatures above » 1  K. Distinction is made between finite geometries (with two substrate plates and 4He films opposite to each other, at a distance of 2 to 50 mm) and the infinite geometry (with no opposite plate), as used in the experiments described in Chapter 4. For thin films, the dominant damping mechanisms are the thermal waves induced in the 4He vapour and in the substrate. For thicker films, the acoustic wave in the vapour becomes the dominant damping mechanism.

The results from this theory, for 4.17 kHz third sound and the infinite geometry, are presented in Figure 1.2 for a glass substrate and in Figure 1.3 for a copper substrate. These calculations were performed using a program written by Brouwer[5]. The minimums in these plots indicate the transition from the thin-film to the thick-film region, where the dominant damping mechanism shifts from thermal to acoustic waves.


Picture 2

Figure 1.2: Attenuation coefficient a on glass as a function of film thickness d, according to Brouwer[4,5]. n = 4.17  kHz, infinite geometry. Solid line: T = 1.10  K; Long dashes: T = 1.21  K; Short dashes: T = 1.30  K.


Picture 3

Figure 1.3: Attenuation coefficient a on copper as a function of film thickness d, according to Brouwer[4,5]. n = 4.17  kHz, infinite geometry. Solid line: T = 1.10  K; Long dashes: T = 1.21  K; Short dashes: T = 1.30  K.

1.4  Film thickness

There are several ways to determine the helium film thickness on the walls of a container. The determination can be performed with the use of one of the following parameters:

1.4.1  The vapour pressure pv

At a distance x from a surface, the helium pressure p can be expressed as [7]
p = pv  e-[(m W(x))/(kB T)]
(1.7)
Here pv is the vapour pressure in the container, W is the Van der Waals potential, kB is Boltzmann's constant and m is the mass of a 4He atom. The helium film-vapour interface will appear at a distance d (the film thickness) from the surface, where pressure p equals the saturated vapour pressure psv:
psv = pv  e - [(m W(d))/(kB T)]
(1.8)
Rewriting this formula using Equation 1.4 gives
d3 = d03 - 1
b
d4
(1.9)
with
d0-3 = kB T
gm
ln psv
pv
(1.10)
The film thickness d can now be calculated recursively using these formulas if T and pv are measured (because psv depends on T only).

1.4.2  The number of 4He atoms in the cell N

The film thickness d can also be calculated if the total number of 4He atoms in the film Nfilm is known:
Nfilm = S ·n ·d
(1.11)
with S the inner area of the container and n the bulk 4He density. However, the 4He density in the first one or two layers will be higher than the bulk density because of the strong Van der Waals interaction. To take this into account Equation 1.11 is rewritten as
Nfilm - N0 = S ·n ·d
(1.12)
Here N0 is the extra number of 4He atoms in the first one or two layers. To calculate Nfilm from the total number of 4He atoms in the cell N the number of 4He atoms in the vapour is required:
Nvapour = pv V
kB T
(1.13)
Using Equation 1.8 yields:
Nvapour = psv(T) V
kB T
 e[(m W(d))/(kB T)]
(1.14)
Since
N = Nfilm + Nvapour
the following result is obtained:
N = N0 + S ·n ·d+ psv(T) V
kB T
 e[(m W(d))/(kB T)]
(1.15)
Rewriting the last equation gives
d = N
S n
- N0
S n
- psv(T) V
kB T
 e[(m W(d))/(kB T)]
(1.16)
which can be solved recursively to determine d if N, T, S and V are known. The value [(N0)/S n] = (0.98 ±0.09)  a.l. has been determined by Draisma [7].

1.4.3  The third sound speed c3

The film thickness can be calculated recursively using Equation 1.1 if c3 and T are known.

Chapter 2
Phonon modes in thin films recalculated

2.1  Introduction

In third sound experiments, a thin gold film (thickness £ 100 nm) is often used as a heater to excite the third sound wave [7]. An effect of the thinness of this film on the heat transfer from the heater to the substrate was suspected because, at low temperature T, the typical phonon wavelength l, calculated with
E = kB T = (h/2p) w = (h/2p) c ê
ê
®
k
 
ê
ê
= (h/2p) c · 2 p
l
becomes 160 nm when using T = 1 K and sound velocity c = 3390  m s-1. This value is of the same order of magnitude as the heater thickness.

Therefore an alternative for the standard (Debye) phonon distribution function was developed and tested by Monte Carlo simulation. Furthermore the Kapitza resistance between the film and another material was recalculated using the new phonon distribution function.

2.2  A new phonon distribution function

2.2.1  Crystal dimensions

All calculations will be performed assuming the film is a solid of dimensions V = Lx×Ly×Lz with a cubic lattice with lattice parameter a. There are N = Nx×Ny×Nz atoms in the crystal. The speed of sound in the solid is c. Only longitudinal phonons will be take into account. This treatment can easily be generalized to other phonon polarizations.

The phonon (reciprocal lattice) vectors take the form [k\vec] = (kx,ky,kz) with

ki = 2 p
Li
·ni
(2.1)
Here the ki are limited to -[(p)/a] ¼[(p)/a] and thus the (integer) ni to the values -[(Ni)/2] ¼[(Ni)/2].

Assuming Lz << Ly << Lx it follows that the values of kx and ky are much more closely spaced than the values of kz. Therefore kx and ky will be assumed to be continuous, while kz will be considered discrete.

2.2.2  The density of states over w

The density of states over w (i.e. the number of phonon states with circular frequency between w and w+dw) is described [6] under the approximation of a continuous distribution of [k\vec]-vectors by
g(w) dw = V w2
2 p2 c3
(2.2)
In the following treatment discrete values will be used for kz. First the density of states for a fixed value of kz is calculated. Then this result is summed for all possible values of kz.

Because the circular frequency of a phonon mode [k\vec] equals

w[k\vec]2 = æ
è
c ê
ê
®
k
 
ê
ê
ö
ø
2
 
= c2 ( kx2 + ky2 + kz2 )
(2.3)
it follows that
kx2 + ky2 = w[k\vec]2
c2
- kz2
The number of [k\vec]-values with w[k\vec] < w for a fixed value of kz equals
Nw[k\vec] < w = p æ
ç
è
w2
c2
- kz2 ö
÷
ø
Lx Ly
(2 p)2
with p( [(w2)/(c2)] - kz2 ) the ``area'' of the circle in [k\vec]-space and [(Lx Ly)/((2 p)2)] the surface density of states on that area.

sphere.gif

Figure 2.1: Phonon [k\vec]-vectors with w[k\vec] < 5

As an example, in figure 2.1, the sphere depicts

kx2+ky2+kz2 = w
c
= 5
The planes represent constant values of
kz = 2 p
Lz
·ni = 2 ·ni
The dark circles thus represent [k\vec]-vectors with [k\vec]2 < 5. In this case, kz Î {-4,-2,0,2,4} are the possible values of kz with w[k\vec] < [(Ö5)/c].

The number of modes with circular frequency between w and w+dw at the fixed value of kz now equals

gkz(w) dw
=

w
( Nw[k\vec] < w)  dw
=
Lx Ly
2 pc2
w dw
For w < c [(2 p)/(Lz)], only the modes with kz = 0 are present (eq. 2.1 and 2.3), so g(w) = [(Lx Ly)/(2 pc2)] w for w < c [(2 p)/(Lz)]. For c [(2 p)/(Lz)] £ w < 2 c [(2 p)/(Lz)], 3 kz-values are possible (kz = -1,0,1 ·[(2 p)/(Lz)]), etc. The total number of modes becomes
g(w)  dw = Lx Ly
2 pc2
·w· æ
ç
è
1 + 2 ê
ê
ë
Lz w
2 pc
ú
ú
û
ö
÷
ø
 dw
(2.4)
where ë x û means the largest integer smaller than or equal to x.

This equation is tested using Monte Carlo techniques (section 2.3). Note that for large values of w equation 2.4 becomes equal to equation 2.2.

2.2.3  Angular dependence of phonon density

The values of [k\vec] do not have a uniform angular distribution because of the discreteness of the values of kz. Therefore the phonon density of states is not only a function of w (depending on the absolute value of [k\vec] only), but also a function of the phonon directions.

The density of states in every kx,ky-plane is [(Lx Ly)/((2 p)2)] (there is one phonon state in every area [(2 p)/(Lx)] ·[(2 p)/(Ly)]). The Dirac d-function must be used because the kx,ky-planes lie a distance [(2 p)/(Lz)] apart. The phonon density of states as a function of [k\vec] is

g(kx,ky,kz)  dkx  dky  dkz = Lx Ly
(2 p)2
·
å
n Î Z 
d æ
ç
è
kz - 2 p
Lz
·n ö
÷
ø
 dkx  dky  dkz
(2.5)
with Z the set of all integer numbers. This function is only valid for sufficiently small values of [k\vec] (see section 2.2.1).

This differential function is transformed into the new coordinates w,q,f with

kx
=
w
c
sinq cosf
ky
=
w
c
sinq sinf
kz
=
w
c
cosq
(2.6)
Here w is the circular frequency, while q and f are given by the direction of the phonon. The density of states as a function of these new variables becomes
g(w,q,f)  dw dq df = g(kx,ky,kz) · w2
c3
sinq dw dq df
where [(w2)/(c3)] sinq is the Jacobian of this transformation. Thus
g(w,q,f)  dw dq df
=
Lx Ly
(2 p)2
·
å
n Î Z 
d æ
ç
è
w
c
cosq- 2 p
Lz
·n ö
÷
ø
· w2
c3
sinq  dw dq df
=
Lx Ly Lz
(2 pc)3
·
å
n Î Z 
d æ
ç
è
Lz w
2 pc
cosq- n ö
÷
ø
·w2 sinq  dw dq df
(2.7)
Again, this is only valid for w < c [(p)/a] (then the ki are always smaller than [(p)/a]).

If the discreteness of the values of kz is neglected, the density of states as a function of [k\vec] becomes

gclass(kx,ky,ky)  dkx dky dkz = Lx Ly Lz
( 2 p)3
(2.8)
Now the density of states as a function of w,q,f becomes
gclass(w,q,f) dw dq df = Lx Ly Lz
( 2 p)3
· w2
c3
 sinq  dw dq df
(2.9)

2.2.4  The density of states over w recalculated as a check

The density of states over w is recalculated to check equation 2.7 by integrating it with respect to q and f.

g(w)  dw
=
ó
õ
p

0 
dq ó
õ
2p

0 
df g(w,q,f)  dw
=
ó
õ
p

0 
dq ó
õ
2p

0 
df  Lx Ly Lz
(2 pc)3
·
å
n Î Z 
d æ
ç
è
Lz w
2 pc
cosq- n ö
÷
ø
·w2 sinq dw
=
Lx Ly Lz
(2 pc)3
·2 p·w2
å
n Î Z 
ó
õ
+1

-1 
dcosq  2 pc
Lz w
d æ
ç
è
cosq- 2 pc
Lz w
·n ö
÷
ø
 dw
=
Lx Ly
2 pc2
·w
å
n Î Z 
ó
õ
+1

-1 
dcosq  d æ
ç
è
cosq- 2 pc
Lz w
·n ö
÷
ø
 dw
The integral in this expression differs from zero only when
2 pc
Lz w
·n Î [ -1 , 1 ]
or
n Î é
ê
ë
- Lz w
2 pc
, Lz w
2 pc
ù
ú
û
Its value then becomes 1. The sum becomes 1 + 2 ë [(Lz w)/(2 pc)] û , so that
g(w)  dw = Lx Ly
2 pc2
·w · æ
ç
è
1 + 2 ê
ê
ë
Lz w
2 pc
ú
ú
û
ö
÷
ø
 dw
which equals equation 2.4.

2.2.5  Taking into account discreteness of ky

If it is assumed that Lz << Ly << Lx the discreteness of ky can be taken into account, just like the discreteness of kz in the previous sections. The phonon density of states as a function of [k\vec] now becomes

g(kx,ky,kz)  dkx dky dkz = Lx
2 p

å
ny Î Z 

å
nz Î Z 
d æ
ç
è
ky- 2 p
Ly
ny ö
÷
ø
d æ
ç
è
kz- 2 p
Lz
nz ö
÷
ø
 dkx dky dkz
and as a function of w, q, f
g(w,q,f)  dw dq df =
Lx Ly Lz
( 2 pc )3

å
ny Î Z 

å
nz Î Z 
d æ
ç
è
Ly w
2 pc
sinqsinf- ny ö
÷
ø
d æ
ç
è
Lz w
2 pc
cosq- nz ö
÷
ø
·
w2 sinq dw dq df
The distribution function over w will be calculated in the region where w < 2 pc / Lz, so kz = 0.
g(w)  dw =
ó
õ
p

0 
dq ó
õ
2p

0 
df  Lx Ly Lz
( 2 pc )3

å
ny Î Z 

å
nz Î Z 
d æ
ç
è
Ly w
2 pc
sinqsinf- ny ö
÷
ø
d æ
ç
è
Lz w
2 pc
cosq- nz ö
÷
ø
·
w2 sinq dw
=
Lx Ly Lz
( 2 pc )3
ó
õ
2p

0 
df ó
õ
+1

-1 
dcosq 2 pc
Lz w

å
ny Î Z 
d æ
ç
è
Ly w
2 pc
sinqsinf- ny ö
÷
ø
d(cosq) w2  dw
=
Lx Ly
( 2 pc )2

å
ny Î Z 
2 pc
Ly w
ó
õ
2p

0 
df d æ
ç
è
sinf- 2 pc
Ly w
ny ö
÷
ø
w dw
=
Lx
2 pc

å
ny Î Z 
ó
õ
2p

0 
df d æ
ç
è
sinf- 2 pc
Ly w
ny ö
÷
ø
 dw
(2.10)
To calculate the integral over f, the integration interval is first changed into [ -p/2, 3p/2 ] and then split into two parts :
ó
õ
2p

0 
df d æ
ç
è
sinf- 2 pc
Ly w
ny ö
÷
ø
=
ó
õ
[(p)/2]

-[(p)/2] 
df d æ
ç
è
sinf- 2 pc
Ly w
ny ö
÷
ø
+ ó
õ
[3/2] p

[(p)/2] 
df d æ
ç
è
sinf- 2 pc
Ly w
ny ö
÷
ø
=
ó
õ
1

-1 
dsinf
d æ
ç
è
sinf- 2 pc
Ly w
ny ö
÷
ø

cos(arcsin(sinf))
- ó
õ
1

-1 
dsinf
d æ
ç
è
sinf- 2 pc
Ly w
ny ö
÷
ø

cos(p- arcsin(sinf))
=
2 ó
õ
1

-1 
d x
d æ
ç
è
x - 2 pc
Ly w
ny ö
÷
ø

cos(arcsinx )
=
ì
ï
ï
ï
í
ï
ï
ï
î
2

Ö

1 - ([(2 pc)/(Ly w)])2 ny2
if | [(2 pc)/(Ly w)] ny | £ 1
0
otherwise
(2.11)
This gives the final result
g(w) dw = Lx
pc
æ
ç
ç
ç
è
1 + ë | [(Ly w)/(2 pc)] | û
å
n = 1 
2

Ö

1 - ([(2 pc)/(Ly w)])2 n2
ö
÷
÷
÷
ø
(2.12)
This equation is checked by Monte Carlo simulation in section 2.3.

In the rest of this chapter, the discreteness of kywill not be taken into account. Only the discreteness of kzwill be taken into account because in the experiments described in Chapters 3 and 4 the effects of the discreteness of ky are too small to play a role of importance. (With Ly = 0.1 mm, the discrete steps in ky are sized [(2 p)/(Ly)] = 63  m-1, which corresponds to (with c = 3390  m s-1) an energy of E = (h/2p) c ky = 2.3·10-29 J. This is small compared to the thermal energy at T = 1 K, E = kB T = 1.4 ·10-23  J).

2.2.6  The density of states over q

The density of states over q (i.e. the number of phonon states with q between q and q+ dq) is calculated by integrating g(w,q,f) with respect to w and f. Only values of [k\vec] with w[k\vec] smaller than a given W will be taken into account, because the modes will be occupied with a Bose-Einstein distribution, which doesn't allow a noticable number of phonons above a certain energy. The Bose-Einstein distribution will be used in section 2.4 to calculate the equilibrium occupation of the phonon state at a given temperature and hence the heat flux. In the following treatment the case q = p/2, phonons with kz = 0 will be excluded. This case will be examined at the end of this section.

gW(q)  dq
=
ó
õ
W

0 
dw ó
õ
2p

0 
df   g(w,q,f)  dq
=
ó
õ
W

0 
dw ó
õ
2p

0 
df   Lx Ly Lz
(2 pc)3
·
å
n Î Z 
d æ
ç
è
Lz w
2 pc
cosq- n ö
÷
ø
·w2 sinq dq
=
Lx Ly Lz
(2 p)2 c3
sinq·
å
n Î Z 
ó
õ
W

0 
dw ê
ê
ê
2 pc
Lz cosq
ê
ê
ê
d æ
ç
è
w- 2 pc
Lz cosq
·n ö
÷
ø
w2  dq
=
Lx Ly
2 pc2
· sinq
| cosq|
·
å
n Î Z 
ó
õ
W

0 
dw   d æ
ç
è
w- 2 pc
Lz cosq
·n ö
÷
ø
w2  dq
(2.13)
The integral in this last equation will yield wn2 with
wn = 2 pc
Lz cosq
·n
provided
wn Î [ 0 , W]
For cosq > 0 it follows
n Î é
ê
ë
0, WLz cosq
2 pc
ù
ú
û
ÇZ
and for cosq < 0
n Î é
ê
ë
WLz cosq
2 pc
, 0 ù
ú
û
ÇZ
This yields that
gW(q)  dq
=
Lx Ly
2 pc2
· sinq
| cosq|
· ë | [(WLz cosq)/(2 pc)] | û
å
n = 0 
æ
ç
è
2 pc
Lz cosq
ö
÷
ø
2

 
·n2  dq
=
Lx Ly
2 pc2
· sinq
| cosq|
· æ
ç
è
2 pc
Lz cosq
ö
÷
ø
2

 
ë | [(WLz cosq)/(2 pc)] | û
å
n = 0 
n2  dq
Because åk = 0n k2 = [1/6] n (2n2 + 3n + 1) our final result is
gW(q)  dq = Lx Ly
Lz2
· sinq
| cos3q|
· p
3
n (2n2 + 3n + 1)  dq with n = ê
ê
ë
ê
ê
ê
WLz cosq
2 pc
ê
ê
ê
ú
ú
û
(2.14)
This distribution is presented in Figure 2.5 (solid line). Note that if W < 2 pc / Lz then n = 0 so gW(q)  dq = 0 for all q ¹ p/2. This means that there are no modes with energy (h/2p) w < 2 pc (h/2p) / Lz that have a component in the kz-direction. Recalling the example in Figure 2.1, w < 2 pc/Lz means that the sphere gets smaller than the spacing between the planes and does not have an intersection with other planes than kz = 0.

Also note that the preceding treatment is only valid for q ¹ [(p)/2], because then cosq = 0. Of course there are a lot of possible modes with q exactly equal to [(p)/2], since this corresponds with the kz = 0-plane. The number of modes with q = [(p)/2], Nw < W; q = [(p)/2]; 0 £ f £ 2 p, can be calculated as follows:

N
=

lim
D® 0 
ó
õ
W

0 
dw ó
õ
[(p)/2]+D

[(p)/2]-D 
dq ó
õ
2 p

0 
df  Lx Ly Lz
( 2 pc )3
·
å
n Î Z 
d æ
ç
è
Lz w
2 pc
cosq- n ö
÷
ø
·w2 sinq
=

lim
D® 0 
ó
õ
W

0 
dw Lx Ly Lz
4 p2 c3
·
å
n Î Z 
ê
ê
ê
2 pc
Lz w
ê
ê
ê
ó
õ
[(p)/2]+D

[(p)/2]-D 
dq  d æ
ç
è
cosq- 2 pc
Lz w
·n ö
÷
ø
·w2 sinq
=

lim
D® 0 
ó
õ
W

0 
dw Lx Ly
2 pc2
·
å
n Î Z 
ó
õ
cos( [(p)/2]+D)

cos( [(p)/2]-D) 
d cosq  d æ
ç
è
cosq- 2 pc
Lz w
·n ö
÷
ø
·w
=
ó
õ
W

0 
dw Lx Ly
2 pc2
· w
=
Lx Ly
4 pc2
·W2
(2.15)

Equations 2.14 and 2.15 will also be checked with a Monte Carlo-simulation in section 2.3.

If the classical phonon distribution function of Equation 2.9 is used, calculation of the density of states over q gives

g W, class (q)  dq
=
ó
õ
W

0 
dw ó
õ
2p

0 
df   gclass(w,q,f)  dq
=
ó
õ
W

0 
dw ó
õ
2p

0 
df    Lx Ly Lz
( 2 p)3
· w2
c3
 sinq dq
=
Lx Ly Lz
( 2 p)2 c3
· W3
3
sinq dq
(2.16)
Taking the Lz ® ¥ limit of Equation 2.14 gives the same result.

2.3  Monte Carlo simulations

The idea of using Monte Carlo techniques to check our calculations was first conceived after finding Equation 2.4 and its unexpected discontinuities. It was decided to generate a large number of phonon [k\vec]-vectors of the form [k\vec] = (kx,ky,kz) with ki = [(2 p)/(Li)] ni and to choose a random integer number in the range -[(Ni)/2] ... [(Ni)/2] for each ni (see section 2.2.1). With a large number of such random [k\vec]-vectors, a good approximation of the phonon distribution function g(w,q,f) will be generated. Next, all these [k\vec]-vectors can be classified with respect to their values of w, q and f to generate, for instance, the density of states over w.

In figures 2.2 to 2.4, g(w) from these Monte Carlo simulations is plotted against w. The material properties have been chosen to resemble a gold strip of dimensions 30 mm × 0.1 mm × 100 nm with c = 3390  m s-1 and a = 0.257  nm. The three figures plot the same function but on a different w-scale: Figure 2.2 for w < 1014  s-1, Figure 2.3 for w < 1012  s-1 and Figure 2.4 for w < 109  s-1. In Figure 2.2, it is demonstrated that, for w >> c[(2 p)/(Lz)] but w < c [(p)/a] Monte Carlo simulation gives the same results for g(w) as the classical result of equation 2.2. For w > c [(p)/a] the finite crystal dimensions that the classical approximation does not take into account causes a breakdown of g(w). In Figure 2.3 the discrete steps of Equation 2.4 can be seen both in the analytical results and in the Monte Carlo simulation. In Figure 2.4, on an even smaller scale, the discontinuities of Equation 2.12 are shown to comply with the Monte Carlo simulation.

In figure 2.5, the distribution function over theta gW(q) is plotted. An upper limit W = 1 ·1012  s-1 was used. The figure shows the correspondence between Equation 2.14 and the Monte Carlo simulation. The number of modes with q = p/2 also agrees with the analytical result from Equation 2.15.


Picture 4

Figure 2.2: Distribution function over w for w < 1014  s-1. Solid line: Classical function (Equation 2.2), coinciding with the new phonon distribution function (Equation 2.4). points: Monte Carlo simulation


Picture 5

Figure 2.3: Distribution function over w for w < 1012 s-1. Solid line: Taking into account discreteness of kz (equation 2.4); points: Monte Carlo simulation


Picture 6

Figure 2.4: Distribution function over w for w < 109  s-1. Solid line: Analytical, taking into account discreteness of kz and ky (equation 2.12); points: Monte Carlo simulation


Picture 7

Figure 2.5: Distribution function over q for w < 1012 s-1. Solid line: Analytical (Equation ); dashed line: Classical results (Equation ); points: Monte Carlo simulation

2.4  Kapitza resistance

In the experiments described in Chapter 4 a thin gold heater of approx. 100 nm thickness and surface dimensions 0.1 mm × 30 mm, sputtered on a glass substrate, was used to excite a third sound wave in a Helium film. In this section the effects of the new phonon distribution function on the heat flux [Q\dot] through the gold-glass interface will be considered. Hereafter the new distribution function will be used to recalculate the thermal (Kapitza) resistance.

2.4.1  Heat flux

The expression for the heat flux from a thin heater of dimensions V = Lx ×Ly ×Lz, with the interface to the substrate in the z-direction, is (from [12])

.
Q
 
= A · ó
õ
¥

0 
dw ó
õ
[(p)/2]

0 
dq ó
õ
2p

0 
df  g(w,q,f)
V
· fBE( b(h/2p) w) · (h/2p) w· c · cosq· a(q)
(2.17)
with
A
=
Lx ·Ly
fBE(x)
=
1
ex - 1
b
=
1
kB T
kB
=
Boltzmann¢s constant
T
=
thermodynamic temperature of the crystal
(h/2p)
=
Dirac¢s constant
a(q)
=
fraction of phonons, coming in at an angle q,